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Model RJH65T14DPQ-A0#T0
Description IGBT Discrete, Renesas Electronics IGBT (Insulated Gate Bipolar Transistor) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: Renesas Electronics
Packaging TO-247-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
16.5  yuan 16.5yuan
5+:
$ 19.3097
50+:
$ 18.4845
200+:
$ 18.0224
500+:
$ 17.9068
1000+:
$ 17.7913
2500+:
$ 17.6593
5000+:
$ 17.5768
7500+:
$ 17.4942
Quantity
5+
50+
200+
500+
1000+
Price
$19.3097
$18.4845
$18.0224
$17.9068
$17.7913
Price $ 19.3097 $ 18.4845 $ 18.0224 $ 17.9068 $ 17.7913
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2554) Minimum order quantity(5)
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Technical parameters/breakdown voltage (collector emitter): 650 V

Technical parameters/reverse recovery time: 250 ns

Technical parameters/rated power (Max): 250 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 250 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.94 mm

External dimensions/width: 5.02 mm

External dimensions/height: 21.13 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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