Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 30.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/rise time: 11.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 200 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTG20N60A4
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HGTG20N60A4 单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
|||
HGTG20N60A4
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HGTG20N60A4 单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
||
|
|
Freescale | 功能相似 | TO-247 |
FAIRCHILD SEMICONDUCTOR HGTG20N60A4D 单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
||
HGTG20N60A4D
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HGTG20N60A4D 单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
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