Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 57 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 80 W |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Leakage source breakdown voltage: | 150 V |
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Technical parameters/Continuous drain current (Ids): | 25A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
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Technical parameters/rated power (Max): | 4 W |
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Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 80W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerFLAT-5x6-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 6 mm |
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Dimensions/Height: | 0.81 mm |
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Dimensions/Packaging: | PowerFLAT-5x6-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL25N15F4
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ST Microelectronics | 功能相似 | PowerVDFN-8 |
Trans MOSFET N-CH 150V 25A 8Pin Power Flat T/R
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||
STL90N3LLH6
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ST Microelectronics | 功能相似 | PowerVDFN-8 |
N 通道 STripFET™ DeepGate™,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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