Technical parameters/dissipated power: 80 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/rise time: 5.1 ns
Technical parameters/Input capacitance (Ciss): 2710pF @25V(Vds)
Technical parameters/rated power (Max): 80 W
Technical parameters/descent time: 11.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 80W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerVDFN-8
External dimensions/packaging: PowerVDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL25N15F3
|
ST Microelectronics | 功能相似 | PowerFLAT-5x6-8 |
Power N-CH 150V 25A
|
||
STL90N3LLH6
|
ST Microelectronics | 类似代替 | PowerVDFN-8 |
N 通道 STripFET™ DeepGate™,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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