Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.0038 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/threshold voltage: 1.7 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 90A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 1690pF @25V(Vds)
Technical parameters/rated power (Max): 60 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerVDFN-8
External dimensions/length: 5 mm
External dimensions/width: 6 mm
External dimensions/height: 0.78 mm
External dimensions/packaging: PowerVDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMS7670
|
Fairchild | 功能相似 | Power-56 |
PowerTrench® N 通道 MOSFET，超过 60A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
|
|
Rochester | 功能相似 | SON |
N沟道PowerTrench㈢ SyncFET TM N-Channel PowerTrench㈢ SyncFET TM
|
||
STL25N15F4
|
ST Microelectronics | 类似代替 | PowerVDFN-8 |
Trans MOSFET N-CH 150V 25A 8Pin Power Flat T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review