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Model SI4480DY
Description N-Channel 80V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
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$ 0.0000
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$ 0.0000
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1432) Minimum order quantity(20)
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Technical parameters/drain source resistance:

35.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.50 W

 

Technical parameters/Leakage source breakdown voltage:

80.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

6.00 A

 

Technical parameters/rise time:

12.5 ns

 

Technical parameters/descent time:

22 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2500 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC

 

Dimensions/Packaging:

SOIC

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4480DY-E3 SI4480DY-E3 Vishay Semiconductor 功能相似 SO
Small Signal Field-Effect Transistor, 6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
SI4480DY-E3 SI4480DY-E3 Vishay Siliconix 功能相似 SO
Small Signal Field-Effect Transistor, 6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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