Technical parameters/drain source resistance: 35.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4480DY
|
VISHAY | 功能相似 | SOIC |
80V N沟道PowerTrench MOSFET的 80V N-Channel PowerTrench MOSFET
|
||
SI4480DY
|
Fairchild | 功能相似 | SO |
80V N沟道PowerTrench MOSFET的 80V N-Channel PowerTrench MOSFET
|
||
SI4480DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET N-CH 80V 6A 8-SOIC
|
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