Technical parameters/drain source resistance: 22.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.60 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4480DY-E3
|
Vishay Semiconductor | 功能相似 | SO |
Small Signal Field-Effect Transistor, 6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4480DY-E3
|
Vishay Siliconix | 功能相似 | SO |
Small Signal Field-Effect Transistor, 6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review