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Model SI4480DY-E3
Description Trans MOSFET N-CH 80V 6A 8Pin SOIC N
Product QR code
Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
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$ 0.0000
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9899) Minimum order quantity(20)
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Technical parameters/drain source resistance:

35.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.50 W

 

Technical parameters/Leakage source breakdown voltage:

80.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

6.00 A

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO

 

Dimensions/Packaging:

SO

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4480DY SI4480DY VISHAY 功能相似 SOIC
80V N沟道PowerTrench MOSFET的 80V N-Channel PowerTrench MOSFET
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80V N沟道PowerTrench MOSFET的 80V N-Channel PowerTrench MOSFET
PDF
SI4480DY-T1-E3 SI4480DY-T1-E3 Vishay Semiconductor 功能相似 SO
MOSFET N-CH 80V 6A 8-SOIC
PDF

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