Technical parameters/rated voltage (DC): | 240 V |
|
Technical parameters/rated current: | 350 mA |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/Input capacitance: | 95.0 pF |
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Technical parameters/gate charge: | 6.80 nC |
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Technical parameters/drain source voltage (Vds): | 240 V |
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Technical parameters/Continuous drain current (Ids): | 350 mA |
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Technical parameters/Input capacitance (Ciss): | 95pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.8 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261 |
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Dimensions/Packaging: | TO-261 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP125
|
Siemens Semiconductor | 功能相似 |
INFINEON BSP125 功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
|
|||
BSP129E6327
|
Infineon | 类似代替 | SOT-223-4 |
MOSFET N-CH 240V 350mA SOT223
|
||
BSP129L6327
|
Infineon | 类似代替 | SOT-223 |
240V,0.05A,N沟道功率MOSFET
|
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