Technical parameters/rated voltage (DC): 240 V
Technical parameters/rated current: 280 mA
Technical parameters/dissipated power: 1.8W (Ta)
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/rise time: 4.1 ns
Technical parameters/Input capacitance (Ciss): 108pF @25V(Vds)
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-4
External dimensions/packaging: SOT-223-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP125
|
Siemens Semiconductor | 功能相似 |
INFINEON BSP125 功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
|
|||
BSP129L6327
|
Infineon | 类似代替 | SOT-223 |
240V,0.05A,N沟道功率MOSFET
|
||
BSP88L6327
|
Infineon | 类似代替 | TO-261 |
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
|
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