Technical parameters/rated voltage (DC): 240 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: N-Channel
Technical parameters/input capacitance: 108 pF
Technical parameters/gate charge: 5.70 nC
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/Continuous drain current (Ids): 50.0 mA
Technical parameters/rise time: 4.1 ns
Technical parameters/Input capacitance (Ciss): 82pF @25V(Vds)
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP125
|
Siemens Semiconductor | 类似代替 |
INFINEON BSP125 功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
|
|||
BSP129
|
Infineon | 类似代替 | SOT-223 |
INFINEON BSP129 晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review