Technical parameters/drain source resistance: | 5.00 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 250 W |
|
Technical parameters/Continuous drain current (Ids): | 85.0 A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
||
|
|
VISHAY | 功能相似 | TO-220 |
MOSFET N-CH 40V 85A TO220AB
|
||
SUP85N04-03-E3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
||
SUP85N04-03-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
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