Technical parameters/drain source resistance: 3.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 6860pF @25V(Vds)
Technical parameters/descent time: 125 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N04-03
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
||
|
|
Visay | 功能相似 |
MOSFET 40V 85A 250W
|
|||
SUP85N04-03
|
VISHAY | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
||
SUP85N04-03
|
Vishay Intertechnology | 功能相似 |
MOSFET 40V 85A 250W
|
|||
SUP85N04-03
|
Vishay Siliconix | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
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