Technical parameters/drain source resistance: 5.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
||
|
|
VISHAY | 功能相似 | TO-220 |
MOSFET N-CH 40V 85A TO220AB
|
||
SUP85N04-03-E3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
||
SUP85N04-03-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 40V 85A TO220AB
|
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