Technical parameters/dissipated power: 3.75W (Ta), 250W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 6860pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 250W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N04-03
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
||
|
|
Visay | 功能相似 |
MOSFET 40V 85A 250W
|
|||
SUP85N04-03
|
VISHAY | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
||
SUP85N04-03
|
Vishay Intertechnology | 功能相似 |
MOSFET 40V 85A 250W
|
|||
SUP85N04-03
|
Vishay Siliconix | 功能相似 | TO-220 |
MOSFET 40V 85A 250W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review