Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-201AD |
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Dimensions/Packaging: | DO-201AD |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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LiteOn | 功能相似 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
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SB3H100-E3/54
|
VISHAY | 功能相似 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
SB3H100-E3/54
|
Vishay Semiconductor | 功能相似 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
|
|
Vishay Siliconix | 功能相似 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
SB3H100-E3/73
|
Vishay Semiconductor | 功能相似 | DO-201AD |
高压肖特基整流器高阻隔技术改进高温性能 High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
||
SB3H100-E3/73
|
VISHAY | 功能相似 | DO-201AD |
高压肖特基整流器高阻隔技术改进高温性能 High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
||
|
|
Jinan Gude Electronic Device | 功能相似 |
TAIWAN SEMICONDUCTOR SR304 小信号肖特基二极管, 单, 40 V, 3 A, 550 mV, 80 A, 125 °C
|
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|
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Daesan Electronics | 功能相似 |
TAIWAN SEMICONDUCTOR SR304 小信号肖特基二极管, 单, 40 V, 3 A, 550 mV, 80 A, 125 °C
|
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|
|
Unspecified | 功能相似 |
TAIWAN SEMICONDUCTOR SR304 小信号肖特基二极管, 单, 40 V, 3 A, 550 mV, 80 A, 125 °C
|
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Master Instrument | 功能相似 |
TAIWAN SEMICONDUCTOR SR304 小信号肖特基二极管, 单, 40 V, 3 A, 550 mV, 80 A, 125 °C
|
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