Technical parameters/forward voltage: 0.8 V
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/maximum reverse leakage current (Ir): 20 uA
Technical parameters/forward voltage (Max): 800mV @3A
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: 175℃ (Max)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Other/Packaging Methods: Tape & Box (TB)
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Precision Group | 功能相似 | DO-201AD |
DIODE, SCHOTTKY RECTIFIER; DO-201AD; 0.85V; 3mA; 34A; 0.5A; 10000; 3 MJ
|
||
SB3H100-E3/23
|
Vishay Semiconductor | 功能相似 | DO-201AD |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
|
||
|
|
LiteOn | 类似代替 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
SB3H100-E3/54
|
VISHAY | 类似代替 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
SB3H100-E3/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
||
|
|
Vishay Siliconix | 类似代替 | DO-201AD |
VISHAY SB3H100-E3/54 肖特基整流二极管, 3A, 100V, DO-201AD
|
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