Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 3.00 A |
|
Technical parameters/output current: | ≤3.00 A |
|
Technical parameters/number of pins: | 2 |
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Technical parameters/forward voltage: | 0.65 V |
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Technical parameters/polarity: | Standard |
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Technical parameters/forward current: | 3 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 100 A |
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Technical parameters/forward voltage (Max): | 800 mV |
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Technical parameters/forward current (Max): | 3 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/operating temperature: | 175 ℃ |
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Technical parameters/working junction temperature (Max): | 175 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-201AD |
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Dimensions/Length: | 9.5 mm |
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Dimensions/Packaging: | DO-201AD |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Commercial, Industrial, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SB3H100
|
Vishay Semiconductor | 类似代替 | DO-201AD |
高压肖特基整流器 High-Voltage Schottky Rectifier
|
||
SB3H100-E3/73
|
Vishay Semiconductor | 类似代替 | DO-201AD |
高压肖特基整流器高阻隔技术改进高温性能 High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
||
SB3H100-E3/73
|
VISHAY | 类似代替 | DO-201AD |
高压肖特基整流器高阻隔技术改进高温性能 High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
||
VS-31DQ10
|
VISHAY | 类似代替 | C-16 |
VISHAY VS-31DQ10 肖特基整流器, 单, 100 V, 3.3 A, DO-201AD, 2 引脚, 850 mV
|
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