Technical parameters/drain source resistance: | 2.60 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 33.0 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±30.0 V |
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Technical parameters/Continuous drain current (Ids): | 2.50 A |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF3N50C
|
Freescale | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
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|||
FQPF4N50
|
Fairchild | 功能相似 | TO-220-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQPF4N50
|
ON Semiconductor | 功能相似 | TO-220-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQPF4N50
|
Freescale | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
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