Technical parameters/dissipated power: 35W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 460pF @25V(Vds)
Technical parameters/dissipated power (Max): 35W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF3N50C
|
Freescale | 类似代替 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
|||
IRFS820B
|
Fairchild | 功能相似 | TO-220 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
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