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Model FQPF4N50

Description 500V N-channel MOSFET 500V N-Channel MOSFET

Brand: Fairchild

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	500 V
Technical parameters/rated current:	2.30 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	2.7 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	35 W
Technical parameters/drain source voltage (Vds):	500 V
Technical parameters/Leakage source breakdown voltage:	500 V
Technical parameters/breakdown voltage of gate source:	±30.0 V
Technical parameters/Continuous drain current (Ids):	2.30 A
Technical parameters/rise time:	45 ns
Technical parameters/Input capacitance (Ciss):	460pF @25V(Vds)
Technical parameters/descent time:	30 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	35W (Tc)
Encapsulation parameters/installation method:	Through Hole
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	16.3 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free