Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP42BU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor KSP42BU , NPN 晶体管, 500 mA, Vce=300 V, HFE:25, 3引脚 TO-92封装
|
||
KSP42TA
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor KSP42TA , NPN 晶体管, 500 mA, Vce=300 V, HFE:25, 3引脚 TO-92封装
|
||
MPSW42G
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR MPSW42G 双极晶体管
|
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