Technical parameters/frequency: 50 MHz
Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 500 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP42BU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor KSP42BU , NPN 晶体管, 500 mA, Vce=300 V, HFE:25, 3引脚 TO-92封装
|
||
MPSW42G
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR MPSW42G 双极晶体管
|
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