Technical parameters/frequency: | 50 MHz |
|
Technical parameters/rated voltage (DC): | 300 V |
|
Technical parameters/rated current: | 500 mA |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @30mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/DC current gain (hFE): | 25 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 4.58 mm |
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Dimensions/Width: | 3.86 mm |
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Dimensions/Height: | 4.58 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Box (TB) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP42
|
Fairchild | 类似代替 | TO-92 |
高压晶体管 High Voltage Transistor
|
||
KSP42BU
|
ON Semiconductor | 完全替代 | TO-226-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
STPSA42-AP
|
ST Microelectronics | 类似代替 | TO-92-3 |
小信号NPN晶体管 SMALL SIGNAL NPN TRANSISTOR
|
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