Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 50 MHz
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.95 mm
External dimensions/width: 3.94 mm
External dimensions/height: 4.95 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP42TA
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSP42TA 单晶体管 双极, NPN, 300 V, 50 MHz, 625 mW, 500 mA, 25 hFE
|
||
STPSA42
|
ST Microelectronics | 完全替代 | TO-92-3 |
小信号NPN晶体管 SMALL SIGNAL NPN TRANSISTOR
|
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