Technical parameters/dissipated power: 3.75W (Ta), 375W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 5100pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN057-200B,118
|
NXP | 功能相似 | TO-263-3 |
D2PAK N-CH 200V 39A
|
||
SUM27N20-78-E3
|
Vishay Intertechnology | 类似代替 | TO-263-3 |
MOSFET N-CH 200V 27A D2PAK
|
||
SUM27N20-78-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
MOSFET N-CH 200V 27A D2PAK
|
||
SUM27N20-78-E3
|
VISHAY | 类似代替 | TO-263 |
MOSFET N-CH 200V 27A D2PAK
|
||
SUM36N20-54P-E3
|
VISHAY | 类似代替 | D2PAK |
MOSFET N-CH 200V 36A D2PAK
|
||
SUM36N20-54P-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 200V 36A D2PAK
|
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