Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 250 W |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Continuous drain current (Ids): | 39.0 A |
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Technical parameters/Input capacitance (Ciss): | 3750pF @25V(Vds) |
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Technical parameters/rated power (Max): | 250 W |
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Technical parameters/dissipated power (Max): | 250W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN057-200B,118
|
NXP | 类似代替 | TO-263-3 |
PSMN057-200B,118 编带
|
||
STB40NF20
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF20 晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
|
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