Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.12W (Ta), 166W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 36.0 A
Technical parameters/Input capacitance (Ciss): 3100pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.12W (Ta), 166W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 200V 65A 3Pin(2+Tab) TO-263
|
|||
SUM65N20-30-E3
|
VISHAY | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 200V 65A 3Pin(2+Tab) TO-263
|
||
SUM65N20-30-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 200V 65A 3Pin(2+Tab) TO-263
|
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