Technical parameters/drain source resistance: 0.012 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 120 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -65.0 A
Technical parameters/Input capacitance (Ciss): 5400pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75W (Ta), 120W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
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||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
|
|
Vishay Intertechnology | 类似代替 |
MOSFET 55V 75A 250W
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SUP90P06-09L-E3
|
Vishay Intertechnology | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
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