Technical parameters/rise time: 380 ns
Technical parameters/Input capacitance (Ciss): 5400pF @25V(Vds)
Technical parameters/descent time: 140 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
|
|
Vishay Intertechnology | 类似代替 |
MOSFET 55V 75A 250W
|
|||
SUP90P06-09L-E3
|
Vishay Intertechnology | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
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