Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.012 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 120 W
Technical parameters/drain source voltage (Vds): -40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -65.0 A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
|
|
Vishay Intertechnology | 类似代替 |
MOSFET 55V 75A 250W
|
|||
SUP90P06-09L-E3
|
Vishay Intertechnology | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
||
SUP90P06-09L-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET P-CH 60V 90A 3Pin(3+Tab) TO-220AB
|
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