Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/drain source resistance: 0.044 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9926A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9926A 双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
|
||
NTMD4N03R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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