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Model FDS9926A
Description FAIRCHILD SEMICONDUCTOR FDS9926A 双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
Product QR code
Brand: Fairchild
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.39  yuan 2.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9449) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

6.50 A

 

Technical parameters/number of channels:

2

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.025 Ω

 

Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/Input capacitance:

650 pF

 

Technical parameters/gate charge:

6.20 nC

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20 V

 

Technical parameters/breakdown voltage of gate source:

±10.0 V

 

Technical parameters/Continuous drain current (Ids):

6.50 A

 

Technical parameters/rise time:

9 ns

 

Technical parameters/Input capacitance (Ciss):

650pF @10V(Vds)

 

Technical parameters/rated power (Max):

900 mW

 

Technical parameters/descent time:

4 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Produc

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS4935A FDS4935A Rochester 类似代替 SOT
FAIRCHILD SEMICONDUCTOR FDS4935A 双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
PDF
FDS6892A FDS6892A ON Semiconductor 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS6892A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 18 mohm, 4.5 V, 900 mV
PDF
FDS6975 FDS6975 Fairchild 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS6975 双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
PDF

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