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Model FDS6892A
Description PowerTrench® Dual N-channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that provides high system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than that of the previous generation. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（
Product QR code
Brand: ON Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.09  yuan 2.09yuan
5+:
$ 2.8256
25+:
$ 2.6163
50+:
$ 2.4697
100+:
$ 2.4070
500+:
$ 2.3651
2500+:
$ 2.3128
5000+:
$ 2.2918
10000+:
$ 2.2604
Quantity
5+
25+
50+
100+
500+
Price
$2.8256
$2.6163
$2.4697
$2.4070
$2.3651
Price $ 2.8256 $ 2.6163 $ 2.4697 $ 2.4070 $ 2.3651
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7929) Minimum order quantity(5)
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Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 1333pF @10V(Vds)

Technical parameters/rated power (Max): 900 mW

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS6975 FDS6975 Fairchild 类似代替 SOIC-8
ON Semiconductor PowerTrench 系列 双 Si P沟道 MOSFET FDS6975, 6 A, Vds=30 V, 8引脚 SOIC封装
PDF
NTMD4N03R2G NTMD4N03R2G ON Semiconductor 类似代替 SOIC-8
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor

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