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Model NTMD4N03R2G
Description N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
Product QR code
Brand: ON Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.19  yuan 2.19yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6732) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

4.00 A

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.048 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

1.9 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

4.00 A, 4.00 mA

 

Technical parameters/rise time:

14 ns

 

Technical parameters/Input capacitance (Ciss):

400pF @20V(Vds)

 

Technical parameters/rated power (Max):

2 W

 

Technical parameters/descent time:

10 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Co

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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