Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 6.00 A |
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Technical parameters/drain source resistance: | 24.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.00 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 6.00 A |
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Technical parameters/rise time: | 22.0 ns |
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Technical parameters/Input capacitance (Ciss): | 950pF @24V(Vds) |
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Technical parameters/rated power (Max): | 1.29 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD4N03R2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTMD6N03R2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON SEMICONDUCTOR NTMD6N03R2G. 场效应管, MOSFET, 双N沟道, 30V, SOIC
|
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