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Specification parameters
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Technical parameters/rated voltage (DC):

30.0 V

Technical parameters/rated current:

6.00 A

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.024 Ω

Technical parameters/polarity:

Dual N-Channel

Technical parameters/dissipated power:

2 W

Technical parameters/threshold voltage:

1.8 V

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/Leakage source breakdown voltage:

30 V

Technical parameters/breakdown voltage of gate source:

±20.0 V

Technical parameters/Continuous drain current (Ids):

6.00 A

Technical parameters/rise time:

22.0 ns

Technical parameters/Input capacitance (Ciss):

950pF @24V(Vds)

Technical parameters/rated power (Max):

1.29 W

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

55 ℃

Technical parameters/dissipated power (Max):

2000 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5 mm

Dimensions/Width:

4 mm

Dimensions/Height:

1.5 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Alternative material

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IRF7313TRPBF	Infineon	功能相似	SOIC-8	INFINEON IRF7313TRPBF 双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V	PDF
IRF7313TRPBF	IFA	功能相似		INFINEON IRF7313TRPBF 双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V	PDF
NTMD6N03R2	ON Semiconductor	类似代替	SOIC-8	功率MOSFET Power MOSFET	PDF
NVMD6N03R2G	ON Semiconductor	类似代替	SOIC-8	功率MOSFET的30 V ， 6 A，双N - 通道SOIC - 8 Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
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Tel: +86-0755-82866643