Technical parameters/number of channels: | 2 |
|
Technical parameters/drain source resistance: | 24 mΩ |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/threshold voltage: | 1.8 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/rise time: | 27 ns |
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Technical parameters/Input capacitance (Ciss): | 950pF @24V(Vds) |
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Technical parameters/rated power (Max): | 1.29 W |
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Technical parameters/descent time: | 34 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD4N03R2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTMD6N03R2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON SEMICONDUCTOR NTMD6N03R2G. 场效应管, MOSFET, 双N沟道, 30V, SOIC
|
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