Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8A/9A
Technical parameters/Input capacitance (Ciss): 857pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6984AS
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6984AS 双路场效应管, MOSFET, 双N沟道 + 肖特基, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
|
||
IRF8313PBF
|
Infineon | 功能相似 | SOIC-8 |
IRF8313PBF 编带
|
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