Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.017 Ω |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 1.7 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 420pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 900 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Width: | 3.99 mm |
|
Dimensions/Height: | 1.5 mm |
|
Dimensions/Packaging: | SOIC-8 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Power management, computers and computer peripherals, industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6984AS
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6984AS 双路场效应管, MOSFET, 双N沟道 + 肖特基, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
|
||
FDS6990A
|
Fairchild | 类似代替 | SOIC-8 |
ON Semiconductor PowerTrench 系列 双 Si N沟道 MOSFET FDS6990A, 7.5 A, Vds=30 V, 8引脚 SOIC封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review