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Model IRF8313PBF
Description PChannel-12 V 1.3 W 10 nC power Mosfet surface mount - MICRO-3
Product QR code
Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.73  yuan 2.73yuan
5+:
$ 3.6842
25+:
$ 3.4113
50+:
$ 3.2202
100+:
$ 3.1384
500+:
$ 3.0838
2500+:
$ 3.0155
5000+:
$ 2.9883
10000+:
$ 2.9473
Quantity
5+
25+
50+
100+
500+
Price
$3.6842
$3.4113
$3.2202
$3.1384
$3.0838
Price $ 3.6842 $ 3.4113 $ 3.2202 $ 3.1384 $ 3.0838
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2399) Minimum order quantity(5)
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Technical parameters/rated power: 2 W

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/product series: IRF8313

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 8.10 A

Technical parameters/rise time: 9.9 ns

Technical parameters/Input capacitance (Ciss): 760pF @15V(Vds)

Technical parameters/rated power (Max): 2 W

Technical parameters/descent time: 4.2 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF8313TRPBF IRF8313TRPBF IFC 类似代替
INFINEON IRF8313TRPBF 双路场效应管, MOSFET, 双N沟道, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V

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