Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 4.9 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.7W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 19A
Technical parameters/Input capacitance (Ciss): 1690pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.7W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS10N3LH5
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V ， 0.019 I© ， 10 A ， SO - 8 STripFETâ ?? ¢ V功率MOSFET N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET
|
||
STS5N15F4
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道150 V， 0.057Î © ， 5 A， SO - 8 STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET⢠DeepGATE⢠Power MOSFET
|
||
STS9NH3LL
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V - 0.018 Ω - 9 A - SO- 8低栅极电荷的STripFET ™III功率MOSFET N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET
|
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