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Description NSTripFET with channel 30V -0.018 Ω -9 A - SO -8 low gate charge ™ III power MOSFET N-channel 30 V -0.018 Ω -9 A - SO-8 low gate charge STripFET ™ III Power MOSFET
Product QR code
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.55  yuan 0.55yuan
10+:
$ 0.7358
50+:
$ 0.6976
100+:
$ 0.6704
300+:
$ 0.6540
500+:
$ 0.6377
1000+:
$ 0.6213
2500+:
$ 0.5968
5000+:
$ 0.5913
Quantity
10+
50+
100+
300+
500+
Price
$0.7358
$0.6976
$0.6704
$0.6540
$0.6377
Price $ 0.7358 $ 0.6976 $ 0.6704 $ 0.6540 $ 0.6377
Start batch production 10+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7644) Minimum order quantity(10)
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Technical parameters/dissipated power: 2.5W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 857pF @25V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/dissipated power (Max): 2.5W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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