Technical parameters/dissipated power: 2.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 857pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS10N3LH5
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V , 0.019 I© , 10 A , SO - 8 STripFETâ ?? ¢ V功率MOSFET N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET
|
||
STS5N15F3
|
ST Microelectronics | 类似代替 | SOIC-8 |
SO N-CH 150V 5A
|
||
STS9NH3LL
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V - 0.018 Ω - 9 A - SO- 8低栅极电荷的STripFET ™III功率MOSFET N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET
|
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