Technical parameters/dissipated power: 2500 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 475pF @25V(Vds)
Technical parameters/descent time: 2.8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS5N15F3
|
ST Microelectronics | 类似代替 | SOIC-8 |
SO N-CH 150V 5A
|
||
STS5N15F4
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道150 V， 0.057Î © ， 5 A， SO - 8 STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET⢠DeepGATE⢠Power MOSFET
|
||
STS9NH3LL
|
ST Microelectronics | 类似代替 | SOIC-8 |
N沟道30 V - 0.018 Ω - 9 A - SO- 8低栅极电荷的STripFET ™III功率MOSFET N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET
|
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