Technical parameters/dissipated power: 2.7 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 11.2 ns
Technical parameters/Input capacitance (Ciss): 1290pF @25V(Vds)
Technical parameters/rated power (Max): 2.7 W
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL65N3LLH5
|
ST Microelectronics | 功能相似 | PowerVDFN-8 |
STMICROELECTRONICS STL65N3LLH5 晶体管, MOSFET, N沟道, 9.5 A, 30 V, 4.8 mohm, 10 V, 1 V
|
||
STS10N3LH5
|
ST Microelectronics | 功能相似 | SOIC-8 |
N沟道30 V , 0.019 I© , 10 A , SO - 8 STripFETâ ?? ¢ V功率MOSFET N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET
|
||
STS12N3LLH5
|
ST Microelectronics | 类似代替 | SO-8 |
N-Channel 30V 0.0075Ω SMT STripFET V Power Mosfet SOIC-8
|
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