Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 4.8 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 9.50 A
Technical parameters/rise time: 14.5 ns
Technical parameters/Input capacitance (Ciss): 1500pF @25V(Vds)
Technical parameters/rated power (Max): 4 W
Technical parameters/descent time: 4.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerVDFN-8
External dimensions/length: 4.75 mm
External dimensions/width: 5.75 mm
External dimensions/height: 0.88 mm
External dimensions/packaging: PowerVDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL65N3LLH5
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ST Microelectronics | 功能相似 | PowerVDFN-8 |
STMICROELECTRONICS STL65N3LLH5 晶体管, MOSFET, N沟道, 9.5 A, 30 V, 4.8 mohm, 10 V, 1 V
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STS10N3LH5
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ST Microelectronics | 功能相似 | SOIC-8 |
N沟道30 V ， 0.019 I© ， 10 A ， SO - 8 STripFETâ ?? ¢ V功率MOSFET N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET
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STS5N15F3
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ST Microelectronics | 功能相似 | SOIC-8 |
SO N-CH 150V 5A
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