Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 3.9 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 4040pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 46 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF4N62K3
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics
|
||
STH180N10F3-2
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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