Technical parameters/drain source resistance: 1.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 620 V
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 550pF @50V(Vds)
Technical parameters/rated power (Max): 25 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 16.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STH180N10F3-2
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
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||
STP150N3LLH6
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道30 V ， 0.0024欧姆， 80 A， DPAK ， IPAK ， TO- 220 N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220
|
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