Technical parameters/number of pins: | 4 |
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Technical parameters/drain source resistance: | 0.0039 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 315 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/Input capacitance: | 6665 pF |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/rise time: | 97.1 ns |
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Technical parameters/Input capacitance (Ciss): | 6665pF @25V(Vds) |
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Technical parameters/rated power (Max): | 315 W |
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Technical parameters/descent time: | 6.9 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 315W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 15.8 mm |
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Dimensions/Width: | 10.4 mm |
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Dimensions/Height: | 4.8 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF4N62K3
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics
|
||
STU4N62K3
|
ST Microelectronics | 功能相似 | TO-251-3 |
STMICROELECTRONICS STU4N62K3 功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
|
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